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Observation of Self-limiting Regime in the Atomic Layer Deposition of ZnO Films using Nitrous Oxide as the Oxygen Supply
- Source :
- ECS Transactions; May 2009, Vol. 19 Issue: 3
- Publication Year :
- 2009
-
Abstract
- We report the observation of self-limiting process in the atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0001) sapphire substrates at low temperatures using diethylzinc (DeZn) and nitrous oxide (N2O). I was found that a monolayer-by- monolayer growth regime occurred in a range of DeZn flow rates from 5.7 to 8.7 μmole/min. Furthermore, the temperature window for the self-limiting process of the ALD-grown ZnO films was also observed ranging from 290 to 310 °. The transmission and absorption spectra of the ZnO films prepared in the self-limiting regime show good optical characteristics with tramsmittance being more than 80% in the visible light region. Experimental results indicate that ZnO films grown in the self-limitng regime all exhibit improved materials characteristics and thickness uniformity.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 19
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs61748683
- Full Text :
- https://doi.org/10.1149/1.3120698