Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs

In this work, we have performed a thorough study of the mobility in 'Si / s-Ge / Si' QW heterostructure pMOSFETs. Through experiments and detailed simulations, the effects of the s-Ge quantum well (QW) thickness and quantum confinement effects on the hole mobility of both, single-gate (SG) and double-gate (DG) QW pMOSFETs have been explored.