Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs

MLA

Krishnamohan, Tejas, et al. “Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure PMOSFETs.” ECS Transactions, vol. 16, no. 10, Oct. 2008. EBSCOhost, https://doi.org/10.1149/1.2986797.

APA

Krishnamohan, T., Pham, A.-T., Jungemann, C., Meinerzhagen, B., & Saraswat, K. (2008). Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs. ECS Transactions, 16(10). https://doi.org/10.1149/1.2986797

Chicago

Krishnamohan, Tejas, Anh-Tuan Pham, Christoph Jungemann, Bernd Meinerzhagen, and Krishna Saraswat. 2008. “Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure PMOSFETs.” ECS Transactions 16 (10). doi:10.1149/1.2986797.