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Detailed investigation of MOCVD-grown β-Ga2O3through quantitative defect spectroscopies

Details

Language :
English
ISSN :
0277786X
Volume :
11687
Issue :
1
Database :
Supplemental Index
Journal :
Proceedings of SPIE
Publication Type :
Periodical
Accession number :
ejs56469146
Full Text :
https://doi.org/10.1117/12.2589947