Detailed investigation of MOCVD-grown β-Ga2O3through quantitative defect spectroscopies

MLA

Rogers, David J., et al. “Detailed Investigation of MOCVD-Grown β-Ga2O3through Quantitative Defect Spectroscopies.” Proceedings of SPIE, vol. 11687, no. 1, Apr. 2021, p. 116870T–116870T–7. EBSCOhost, https://doi.org/10.1117/12.2589947.

APA

Rogers, D. J., Look, D. C., Teherani, F. H., Ghadi, H., McGlone, J. F., Feng, Z., Bhuiyan, A. F. M. A. U., Zhang, Y., Zhao, H., Armstrong, A., Burns, G. R., Vizkelethy, G., Bielejec, E., Arehart, A. R., & Ringel, S. A. (2021). Detailed investigation of MOCVD-grown β-Ga2O3through quantitative defect spectroscopies. Proceedings of SPIE, 11687(1), 116870T–116870T–7. https://doi.org/10.1117/12.2589947

Chicago

Rogers, David J., David C. Look, Ferechteh H. Teherani, Hemant Ghadi, Joe F. McGlone, Zixuan Feng, A.F.M. Anhar Uddin Bhuiyan, et al. 2021. “Detailed Investigation of MOCVD-Grown β-Ga2O3through Quantitative Defect Spectroscopies.” Proceedings of SPIE 11687 (1): 116870T–116870T–7. doi:10.1117/12.2589947.