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The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu Interconnects
- Source :
- ECS Transactions; March 2011, Vol. 34 Issue: 1 p787-792, 6p
- Publication Year :
- 2011
-
Abstract
- The influence of the SiN cap-layer deposition process including different pre-clean treatments on the voltage breakdown (VBD) and electromigration (EM) behavior of copper dual damascene metallization has been studied. A remarkable improvement for voltage breakdown and electromigration were revealed depending primarily on the pre-clean treatment before cap-layer deposition rather than the deposition process itself.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 34
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs52648008