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Hollow Boron-Doped Si/SiOxNanospheres Embedded in the Vanadium Nitride/Nanopore-Assisted Carbon Conductive Network for Superior Lithium Storage
- Source :
- ACS Applied Materials & Interfaces; December 2019, Vol. 11 Issue: 49 p45612-45620, 9p
- Publication Year :
- 2019
-
Abstract
- SiOx-based anode materials with high capacity and outstanding cycling performance have gained numerous attentions. Nevertheless, the poor electrical conductivity and non-negligible volume change hinder their further application in Li-ion batteries. Herein, we propose a new strategy to construct a hollow nanosphere with boron-doped Si/SiOxdecorated with vanadium nitride (VN) nanoparticles and embedded in a nitrogen-doped, porous, and partial graphitization carbon layer (B-Si/SiOx@VN/PC). Benefiting from such structural and compositional features, the B-Si/SiOx@VN/PC electrode exhibits a stable cycling capacity of 1237.1 mA h g–1at a current density of 0.5 A g–1with an appealing capacity retention of 87.0% after 300 cycles. Additionally, it delivers high-rate capabilities of 1139.4, 940.7, and 653.4 mA h g–1at current densities of 2, 5, and 10 A g–1, respectively, and ranks among the best SiOx-based anode materials. The outstanding electrochemical performance can be ascribed to the following reasons: (1) its hollow structure makes the Li+transportation length decreased. (2) The existing nanopores facilitate the Li+insertion/desertion and accommodate the volume variation. (3) The nitrogen-doped partial graphitization carbon enhances the electrical conductivity and promotes the formation of stable solid electrolyte interface layers during the repetitive Li+intercalation/extraction process.
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 11
- Issue :
- 49
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Periodical
- Accession number :
- ejs51552380
- Full Text :
- https://doi.org/10.1021/acsami.9b14912