Hollow Boron-Doped Si/SiOxNanospheres Embedded in the Vanadium Nitride/Nanopore-Assisted Carbon Conductive Network for Superior Lithium Storage

MLA

Zhang, Xinlin, et al. “Hollow Boron-Doped Si/SiOxNanospheres Embedded in the Vanadium Nitride/Nanopore-Assisted Carbon Conductive Network for Superior Lithium Storage.” ACS Applied Materials & Interfaces, vol. 11, no. 49, Dec. 2019, pp. 45612–20. EBSCOhost, https://doi.org/10.1021/acsami.9b14912.

APA

Zhang, X., Huang, L., Shen, Q., Zhou, X., & Chen, Y. (2019). Hollow Boron-Doped Si/SiOxNanospheres Embedded in the Vanadium Nitride/Nanopore-Assisted Carbon Conductive Network for Superior Lithium Storage. ACS Applied Materials & Interfaces, 11(49), 45612–45620. https://doi.org/10.1021/acsami.9b14912

Chicago

Zhang, Xinlin, Liwu Huang, Qianqian Shen, Xiaoren Zhou, and Yungui Chen. 2019. “Hollow Boron-Doped Si/SiOxNanospheres Embedded in the Vanadium Nitride/Nanopore-Assisted Carbon Conductive Network for Superior Lithium Storage.” ACS Applied Materials & Interfaces 11 (49): 45612–20. doi:10.1021/acsami.9b14912.