Charge carrier lifetime modification in silicon by high energy H^+ or H^+ ion implantation

Details

Language :

English

ISSN :

0168583X

Volume :

127

Issue :

1

Database :

Supplemental Index

Journal :

Nuclear Instruments and Methods in Physics Research Section B

Publication Type :

Periodical

Accession number :

ejs2946481

Full Text :

https://doi.org/10.1016/S0168-583X(96)01117-2