Charge carrier lifetime modification in silicon by high energy H^+ or H^+ ion implantation

MLA

Khanh, N. Q., et al. “Charge Carrier Lifetime Modification in Silicon by High Energy H^+ or H^+ Ion Implantation.” Nuclear Instruments and Methods in Physics Research Section B, vol. 127, no. 1, Jan. 1997, pp. 388–92. EBSCOhost, https://doi.org/10.1016/S0168-583X(96)01117-2.

APA

Khanh, N. Q., Tuetto, P., Buiu, O., Jaroli, E. N., Biro, L. P., Manuaba, A., & Gyulai, J. (1997). Charge carrier lifetime modification in silicon by high energy H^+ or H^+ ion implantation. Nuclear Instruments and Methods in Physics Research Section B, 127(1), 388–392. https://doi.org/10.1016/S0168-583X(96)01117-2

Chicago

Khanh, N. Q., P. Tuetto, O. Buiu, E. N. Jaroli, L. P. Biro, A. Manuaba, and J. Gyulai. 1997. “Charge Carrier Lifetime Modification in Silicon by High Energy H^+ or H^+ Ion Implantation.” Nuclear Instruments and Methods in Physics Research Section B 127 (1): 388–92. doi:10.1016/S0168-583X(96)01117-2.