Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method

Details

Language :

English

ISSN :

00223093

Volume :

211

Issue :

1

Database :

Supplemental Index

Journal :

Journal of Non-Crystalline Solids

Publication Type :

Periodical

Accession number :

ejs2610323

Full Text :

https://doi.org/10.1016/S0022-3093(96)00631-X