Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method

MLA

Hazra, S., et al. “Low Defect Density Amorphous Silicon Germanium Alloy (1.5 EV) Deposited at High Growth Rate under Helium Dilution in RF-PECVD Method.” Journal of Non-Crystalline Solids, vol. 211, no. 1, Jan. 1997, pp. 22–29. EBSCOhost, https://doi.org/10.1016/S0022-3093(96)00631-X.

APA

Hazra, S., Middya, A. R., & Ray, S. (1997). Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method. Journal of Non-Crystalline Solids, 211(1), 22–29. https://doi.org/10.1016/S0022-3093(96)00631-X

Chicago

Hazra, S., A. R. Middya, and S. Ray. 1997. “Low Defect Density Amorphous Silicon Germanium Alloy (1.5 EV) Deposited at High Growth Rate under Helium Dilution in RF-PECVD Method.” Journal of Non-Crystalline Solids 211 (1): 22–29. doi:10.1016/S0022-3093(96)00631-X.