Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells

Details

Language :

English

ISSN :

00220248

Volume :

221

Issue :

1

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2579330

Full Text :

https://doi.org/10.1016/S0022-0248(00)00765-X