Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells

MLA

Venkataraghavan, R., et al. “Influence of Compressive Strain on the Arsenic Incorporation in MOVPE-Grown InAsP/InP Single Quantum Wells.” Journal of Crystal Growth, vol. 221, no. 1, Jan. 2000, pp. 535–39. EBSCOhost, https://doi.org/10.1016/S0022-0248(00)00765-X.

APA

Venkataraghavan, R., Gokhale, M. R., Shah, A. P., Bhattacharya, A., Chandrasekaran, K. S., & Arora, B. M. (2000). Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells. Journal of Crystal Growth, 221(1), 535–539. https://doi.org/10.1016/S0022-0248(00)00765-X

Chicago

Venkataraghavan, R., M. R. Gokhale, A. P. Shah, A. Bhattacharya, K. S. Chandrasekaran, and B. M. Arora. 2000. “Influence of Compressive Strain on the Arsenic Incorporation in MOVPE-Grown InAsP/InP Single Quantum Wells.” Journal of Crystal Growth 221 (1): 535–39. doi:10.1016/S0022-0248(00)00765-X.