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Microstructural Analysis of Void Formation Due to a NH4Cl Layer for Self-Separation of GaN Thick Films.
- Source :
- Crystal Growth & Design; Jun2009, Vol. 9 Issue 6, p2877-2880, 4p
- Publication Year :
- 2009
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 9
- Issue :
- 6
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 41427274
- Full Text :
- https://doi.org/10.1021/cg900193k