Microstructural Analysis of Void Formation Due to a NH4Cl Layer for Self-Separation of GaN Thick Films.

MLA

Hyun-Jae Lee, et al. “Microstructural Analysis of Void Formation Due to a NH4Cl Layer for Self-Separation of GaN Thick Films.” Crystal Growth & Design, vol. 9, no. 6, June 2009, pp. 2877–80. EBSCOhost, https://doi.org/10.1021/cg900193k.

APA

Hyun-Jae Lee, Jun-Seok Ha, Takafumi Yao, Chinkyo Kim, Soon-Ku Hong, Jiho Chang, Jae Wook Lee, & Jeong Yong Lee. (2009). Microstructural Analysis of Void Formation Due to a NH4Cl Layer for Self-Separation of GaN Thick Films. Crystal Growth & Design, 9(6), 2877–2880. https://doi.org/10.1021/cg900193k

Chicago

Hyun-Jae Lee, Jun-Seok Ha, Takafumi Yao, Chinkyo Kim, Soon-Ku Hong, Jiho Chang, Jae Wook Lee, and Jeong Yong Lee. 2009. “Microstructural Analysis of Void Formation Due to a NH4Cl Layer for Self-Separation of GaN Thick Films.” Crystal Growth & Design 9 (6): 2877–80. doi:10.1021/cg900193k.