The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors.

Details

Language :

English

ISSN :

03744884

Volume :

68

Issue :

7

Database :

Supplemental Index

Journal :

Journal of the Korean Physical Society

Publication Type :

Academic Journal

Accession number :

117458221

Full Text :

https://doi.org/10.3938/jkps.68.883