The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors.

MLA

Liu, Yan, et al. “The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-Effect Transistors.” Journal of the Korean Physical Society, vol. 68, no. 7, Apr. 2016, pp. 883–88. EBSCOhost, https://doi.org/10.3938/jkps.68.883.

APA

Liu, Y., Lin, Z., Zhao, J., Yang, M., Shi, W., Lv, Y., & Feng, Z. (2016). The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors. Journal of the Korean Physical Society, 68(7), 883–888. https://doi.org/10.3938/jkps.68.883

Chicago

Liu, Yan, Zhaojun Lin, Jingtao Zhao, Ming Yang, Wenjing Shi, Yuanjie Lv, and Zhihong Feng. 2016. “The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-Effect Transistors.” Journal of the Korean Physical Society 68 (7): 883–88. doi:10.3938/jkps.68.883.