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Electrochemical and Surface Analysis of the Corrosion Protection of Copper by Nanometer-Thick Alumina Coatings Prepared by Atomic Layer Deposition.

Authors :
Mirhashemihaghighi, Shadi
Światowska, Jolanta
Maurice, Vincent
Seyeux, Antoine
Klein, Lorena H.
Härkönen, Emma
Ritala, Mikko
Marcus, Philippe
Source :
Journal of The Electrochemical Society; 2015, Vol. 162 Issue 8, pC377-C384, 8p
Publication Year :
2015

Abstract

Corrosion protection by ultra-thin (< 50 nm) alumina films deposited by atomic layer deposition (ALD) on copper at 250°C was studied in 0.5 M NaCl aqueous solution by combining electrochemical and surface analytical methods. Time-of-Flight Secondary Ion Mass Spectrometry revealed a homogenous in-depth stoichiometry of the alumina coatings and their residual bulk contamination by organic and water precursor fragments. Trace contamination by a spurious Cu oxide was evidenced at the interface with the Cu substrate despite a reducing pre-treatment. Atomic force microscopy images revealed conformal substrate coverage and a granularlike coating morphology at the nanometer scale. Linear Sweep Voltammetry (LSV) and Electrochemical Impedance Spectroscopy (EIS) showed no electrochemical activity of the coating and a corrosion decrease reaching 4 orders of magnitude for coated samples in comparison with bare copper. Uncoated surface fraction was quantified by application of three different methods using the LSV and EIS data which led to results in excellent agreement. The uncoated surface fraction for 50 nm Al<subscript>2</subscript>O<subscript>3</subscript> layers was ~0.01%, confirming ALD alumina as an excellent coating for corrosion protection with spectacularly low residual corrosion activity restricted to the bottom of channel defects connecting the substrate to environment through the coating. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00134651
Volume :
162
Issue :
8
Database :
Supplemental Index
Journal :
Journal of The Electrochemical Society
Publication Type :
Academic Journal
Accession number :
103699692
Full Text :
https://doi.org/10.1149/2.0081508jes