Metallized ultra-shallow-junction device technology for sub-0.1 /spl mu/m gate MOSFET's.

Details

Language :

English

ISSN :

00189383

Volume :

41

Issue :

5

Database :

Complementary Index

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

93119387

Full Text :

https://doi.org/10.1109/16.285027