Metallized ultra-shallow-junction device technology for sub-0.1 /spl mu/m gate MOSFET's.

MLA

Hisamoto, D., et al. “Metallized Ultra-Shallow-Junction Device Technology for Sub-0.1 /Spl Mu/m Gate MOSFET’s.” IEEE Transactions on Electron Devices, vol. 41, no. 5, Jan. 1994, pp. 745–50. EBSCOhost, https://doi.org/10.1109/16.285027.

APA

Hisamoto, D., Nakamura, K., Saito, M., Kobayashi, N., Kimura, S., Nagai, R., Nishida, T., & Takeda, E. (1994). Metallized ultra-shallow-junction device technology for sub-0.1 /spl mu/m gate MOSFET’s. IEEE Transactions on Electron Devices, 41(5), 745–750. https://doi.org/10.1109/16.285027

Chicago

Hisamoto, D., K. Nakamura, M. Saito, N. Kobayashi, S. Kimura, R. Nagai, T. Nishida, and E. Takeda. 1994. “Metallized Ultra-Shallow-Junction Device Technology for Sub-0.1 /Spl Mu/m Gate MOSFET’s.” IEEE Transactions on Electron Devices 41 (5): 745–50. doi:10.1109/16.285027.