Impact of the gate-drain overlapped device (GOLD) for deep submicrometer VLSI.

Details

Language :

English

ISSN :

00189383

Volume :

35

Issue :

12

Database :

Complementary Index

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

93116842

Full Text :

https://doi.org/10.1109/16.8781