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Three-dimensional simulation of VLSI MOSFET's: The three-dimensional simulation program WATMOS.
- Source :
- IEEE Transactions on Electron Devices; 1982, Vol. 29 Issue 4, p631-638, 8p
- Publication Year :
- 1982
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 29
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93113924
- Full Text :
- https://doi.org/10.1109/T-ED.1982.20755