Cite
Three-dimensional simulation of VLSI MOSFET's: The three-dimensional simulation program WATMOS.
MLA
Husain, A., and S. G. Chamberlain. “Three-Dimensional Simulation of VLSI MOSFET’s: The Three-Dimensional Simulation Program WATMOS.” IEEE Transactions on Electron Devices, vol. 29, no. 4, Jan. 1982, pp. 631–38. EBSCOhost, https://doi.org/10.1109/T-ED.1982.20755.
APA
Husain, A., & Chamberlain, S. G. (1982). Three-dimensional simulation of VLSI MOSFET’s: The three-dimensional simulation program WATMOS. IEEE Transactions on Electron Devices, 29(4), 631–638. https://doi.org/10.1109/T-ED.1982.20755
Chicago
Husain, A., and S.G. Chamberlain. 1982. “Three-Dimensional Simulation of VLSI MOSFET’s: The Three-Dimensional Simulation Program WATMOS.” IEEE Transactions on Electron Devices 29 (4): 631–38. doi:10.1109/T-ED.1982.20755.