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10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs.

Authors :
Akahori, Y.
Akatsu, Y.
Kohzen, A.
Yoshida, J.
Source :
IEEE Photonics Technology Letters; 1992, Vol. 4 Issue 7, p754-756, 3p
Publication Year :
1992

Details

Language :
English
ISSN :
10411135
Volume :
4
Issue :
7
Database :
Complementary Index
Journal :
IEEE Photonics Technology Letters
Publication Type :
Academic Journal
Accession number :
92827527
Full Text :
https://doi.org/10.1109/68.145262