Cite
10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs.
MLA
Akahori, Y., et al. “10-Gb/s High-Speed Monolithically Integrated Photoreceiver Using InGaAs p-i-n PD and Planar Doped InAlAs/InGaAs HEMTs.” IEEE Photonics Technology Letters, vol. 4, no. 7, Jan. 1992, pp. 754–56. EBSCOhost, https://doi.org/10.1109/68.145262.
APA
Akahori, Y., Akatsu, Y., Kohzen, A., & Yoshida, J. (1992). 10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs. IEEE Photonics Technology Letters, 4(7), 754–756. https://doi.org/10.1109/68.145262
Chicago
Akahori, Y., Y. Akatsu, A. Kohzen, and J. Yoshida. 1992. “10-Gb/s High-Speed Monolithically Integrated Photoreceiver Using InGaAs p-i-n PD and Planar Doped InAlAs/InGaAs HEMTs.” IEEE Photonics Technology Letters 4 (7): 754–56. doi:10.1109/68.145262.