A 60-ns 16-Mbit CMOS DRAM with a transposed data-line structure.

Details

Language :

English

ISSN :

00189200

Volume :

23

Issue :

5

Database :

Complementary Index

Journal :

IEEE Journal of Solid-State Circuits

Publication Type :

Academic Journal

Accession number :

92812019

Full Text :

https://doi.org/10.1109/4.5932