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SrBi/sub 2/TaO/sub 9/ thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory.
- Source :
- International Electron Devices Meeting IEDM Technical Digest; 1997, p621-624, 4p
- Publication Year :
- 1997
Details
- Language :
- English
- ISBNs :
- 9780780341005
- Database :
- Complementary Index
- Journal :
- International Electron Devices Meeting IEDM Technical Digest
- Publication Type :
- Conference
- Accession number :
- 92188214
- Full Text :
- https://doi.org/10.1109/IEDM.1997.650461