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SrBi/sub 2/TaO/sub 9/ thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory.

Authors :
Takeo, M.
Azuma, M.
Hirano, H.
Asari, K.
Moriwaki, N.
Otsuki, T.
Tatsuuma, K.
Source :
International Electron Devices Meeting IEDM Technical Digest; 1997, p621-624, 4p
Publication Year :
1997

Details

Language :
English
ISBNs :
9780780341005
Database :
Complementary Index
Journal :
International Electron Devices Meeting IEDM Technical Digest
Publication Type :
Conference
Accession number :
92188214
Full Text :
https://doi.org/10.1109/IEDM.1997.650461