SrBi/sub 2/TaO/sub 9/ thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory.

MLA

Takeo, M., et al. “SrBi/Sub 2/TaO/Sub 9/ Thin Film Capacitor Model Including Polarization Reversal Response for Nanosecond Range Circuit Simulation of Ferroelectric Nonvolatile Memory.” International Electron Devices Meeting IEDM Technical Digest, Jan. 1997, pp. 621–24. EBSCOhost, https://doi.org/10.1109/IEDM.1997.650461.

APA

Takeo, M., Azuma, M., Hirano, H., Asari, K., Moriwaki, N., Otsuki, T., & Tatsuuma, K. (1997). SrBi/sub 2/TaO/sub 9/ thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory. International Electron Devices Meeting IEDM Technical Digest, 621–624. https://doi.org/10.1109/IEDM.1997.650461

Chicago

Takeo, M., M. Azuma, H. Hirano, K. Asari, N. Moriwaki, T. Otsuki, and K. Tatsuuma. 1997. “SrBi/Sub 2/TaO/Sub 9/ Thin Film Capacitor Model Including Polarization Reversal Response for Nanosecond Range Circuit Simulation of Ferroelectric Nonvolatile Memory.” International Electron Devices Meeting IEDM Technical Digest, January, 621–24. doi:10.1109/IEDM.1997.650461.