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EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide.
- Source :
- Semiconductor Science & Technology; 1998, Vol. 13 Issue 1, p59-70, 12p
- Publication Year :
- 1998
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 13
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 86087094
- Full Text :
- https://doi.org/10.1088/0268-1242/13/1/009