EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide.

MLA

Greulich-Weber, S., et al. “EPR and ENDOR Investigations of B Acceptors in 3C-, 4H- and 6H-Silicon Carbide.” Semiconductor Science & Technology, vol. 13, no. 1, Jan. 1998, pp. 59–70. EBSCOhost, https://doi.org/10.1088/0268-1242/13/1/009.

APA

Greulich-Weber, S., Feege, F., Kalabukhova, K. N., Lukin, S. N., Spaeth, J.-M., & Adrian, F. J. (1998). EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide. Semiconductor Science & Technology, 13(1), 59–70. https://doi.org/10.1088/0268-1242/13/1/009

Chicago

Greulich-Weber, S, F Feege, K N Kalabukhova, S N Lukin, J-M Spaeth, and F J Adrian. 1998. “EPR and ENDOR Investigations of B Acceptors in 3C-, 4H- and 6H-Silicon Carbide.” Semiconductor Science & Technology 13 (1): 59–70. doi:10.1088/0268-1242/13/1/009.