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Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With fT/fMAX = \450/510\ \GHz.
- Source :
- IEEE Electron Device Letters; Jan2013, Vol. 34 Issue 1, p33-35, 3p
- Publication Year :
- 2013
-
Abstract
- A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/fMAX = \450/510\ \GHz for a \0.3 \times \2\ \mu\m^2 device. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 34
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 84489657
- Full Text :
- https://doi.org/10.1109/LED.2012.2224090