Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With fT/fMAX = \450/510\ \GHz.

MLA

Xu, Huiming, et al. “Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With FT/FMAX = \450/510\ \GHz.” IEEE Electron Device Letters, vol. 34, no. 1, Jan. 2013, pp. 33–35. EBSCOhost, https://doi.org/10.1109/LED.2012.2224090.

APA

Xu, H., Iverson, E. W., Liao, C.-C., Cheng, K. Y., & Feng, M. (2013). Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With fT/fMAX = \450/510\ \GHz. IEEE Electron Device Letters, 34(1), 33–35. https://doi.org/10.1109/LED.2012.2224090

Chicago

Xu, Huiming, Eric W. Iverson, Chi-Chih Liao, K. Y. Cheng, and Milton Feng. 2013. “Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With FT/FMAX = \450/510\ \GHz.” IEEE Electron Device Letters 34 (1): 33–35. doi:10.1109/LED.2012.2224090.