Three-dimensional silicon micromachining.

A process for fabricating arbitrary-shaped, two- and three-dimensional silicon and porous silicon components has been developed, based on high-energy ion irradiation, such as 250 keV to 1 MeV protons and helium. Irradiation alters the hole current flow during subsequent electrochemical anodization, allowing the anodization rate to be slowed or stopped for low/high fluences. For moderate fluences the anodization rate is selectively stopped only at depths corresponding to the high defect density at the end of ion range, allowing true three-dimensional silicon machining. The use of this process in fields including optics, photonics, holography and nanoscale depth machining is reviewed. [ABSTRACT FROM AUTHOR]