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Deep-level effects on slow current transients and current collapse in GaN MESFETs.

Authors :
Yonemoto, K.
Horio, K.
Source :
13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004; 2004, p267-270, 4p
Publication Year :
2004

Details

Language :
English
ISBNs :
9780780386686
Database :
Complementary Index
Journal :
13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004
Publication Type :
Conference
Accession number :
82088126
Full Text :
https://doi.org/10.1109/SIM.2005.1511434