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Deep-level effects on slow current transients and current collapse in GaN MESFETs.
- Source :
- 13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004; 2004, p267-270, 4p
- Publication Year :
- 2004
Details
- Language :
- English
- ISBNs :
- 9780780386686
- Database :
- Complementary Index
- Journal :
- 13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004
- Publication Type :
- Conference
- Accession number :
- 82088126
- Full Text :
- https://doi.org/10.1109/SIM.2005.1511434