Cite
Deep-level effects on slow current transients and current collapse in GaN MESFETs.
MLA
Yonemoto, K., and K. Horio. “Deep-Level Effects on Slow Current Transients and Current Collapse in GaN MESFETs.” 13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004, Jan. 2004, pp. 267–70. EBSCOhost, https://doi.org/10.1109/SIM.2005.1511434.
APA
Yonemoto, K., & Horio, K. (2004). Deep-level effects on slow current transients and current collapse in GaN MESFETs. 13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004, 267–270. https://doi.org/10.1109/SIM.2005.1511434
Chicago
Yonemoto, K., and K. Horio. 2004. “Deep-Level Effects on Slow Current Transients and Current Collapse in GaN MESFETs.” 13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004, January, 267–70. doi:10.1109/SIM.2005.1511434.