New stress inducing technique of epitaxial si on recessed S/D fabricated in substrate strained-si of [100]channel on rotated wafers.

Details

Language :

English

ISBNs :

9780780392687

Database :

Complementary Index

Journal :

IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest

Publication Type :

Conference

Accession number :

81610654

Full Text :

https://doi.org/10.1109/IEDM.2005.1609391