New stress inducing technique of epitaxial si on recessed S/D fabricated in substrate strained-si of [100]channel on rotated wafers.

MLA

Sanuki, T., et al. “New Stress Inducing Technique of Epitaxial Si on Recessed S/D Fabricated in Substrate Strained-Si of [100]Channel on Rotated Wafers.” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, Jan. 2005, pp. 501–04. EBSCOhost, https://doi.org/10.1109/IEDM.2005.1609391.

APA

Sanuki, T., Tanaka, H., Oota, K., Fujii, O., Yamaguchi, R., Nakayama, K., Morimasa, Y., Takasu, Y., Idebuchi, J., Nishiyama, N., Fukui, H., Yoshimura, H., Matsuo, K., Mizushima, I., Ito, H., Takegawa, Y., Saito, M., Iwai, M., Nagashima, N., & Matsuoka, F. (2005). New stress inducing technique of epitaxial si on recessed S/D fabricated in substrate strained-si of [100]channel on rotated wafers. IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, 501–504. https://doi.org/10.1109/IEDM.2005.1609391

Chicago

Sanuki, T., H. Tanaka, K. Oota, O. Fujii, R. Yamaguchi, K. Nakayama, Y. Morimasa, et al. 2005. “New Stress Inducing Technique of Epitaxial Si on Recessed S/D Fabricated in Substrate Strained-Si of [100]Channel on Rotated Wafers.” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, January, 501–4. doi:10.1109/IEDM.2005.1609391.