Demonstration of scaled 0.099µm2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology.

Authors :: Veloso, A.
Demuynck, S.
Ercken, M.
Goethals, A.M.
Locorotondo, S.
Lazzarino, F.
Altamirano, E.
Huffman, C.
De Keersgieter, A.
Brus, S.
Demand, M.
Struyf, H.
De Backer, J.
Hermans, J.
Delvaux, C.
Baudemprez, B.
Vandeweyer, T.
Van Roey, F.
Baerts, C.
Goossens, D.
Source :: 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p
Publication Year :: 2009

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