Demonstration of scaled 0.099µm2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology.

MLA

Veloso, A., et al. “Demonstration of Scaled 0.099µm2 FinFET 6T-SRAM Cell Using Full-Field EUV Lithography for (Sub-)22nm Node Single-Patterning Technology.” 2009 IEEE International Electron Devices Meeting (IEDM), Jan. 2009, pp. 1–4. EBSCOhost, https://doi.org/10.1109/IEDM.2009.5424365.

APA

Veloso, A., Demuynck, S., Ercken, M., Goethals, A. M., Locorotondo, S., Lazzarino, F., Altamirano, E., Huffman, C., De Keersgieter, A., Brus, S., Demand, M., Struyf, H., De Backer, J., Hermans, J., Delvaux, C., Baudemprez, B., Vandeweyer, T., Van Roey, F., Baerts, C., & Goossens, D. (2009). Demonstration of scaled 0.099µm2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology. 2009 IEEE International Electron Devices Meeting (IEDM), 1–4. https://doi.org/10.1109/IEDM.2009.5424365

Chicago

Veloso, A., S. Demuynck, M. Ercken, A.M. Goethals, S. Locorotondo, F. Lazzarino, E. Altamirano, et al. 2009. “Demonstration of Scaled 0.099µm2 FinFET 6T-SRAM Cell Using Full-Field EUV Lithography for (Sub-)22nm Node Single-Patterning Technology.” 2009 IEEE International Electron Devices Meeting (IEDM), January, 1–4. doi:10.1109/IEDM.2009.5424365.