Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices.

Authors :: Lin, H.-C.
Lee, D.-Y.
Ou, S.-C.
Chien, C.-H.
Huang, T.-Y.
Source :: Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765); 2003, p76-79, 4p
Publication Year :: 2003

Language :: English
ISBNs :: 9784891140373
Database :: Complementary Index
Journal :: Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Publication Type :: Conference
Accession number :: 81134920
Full Text :: https://doi.org/10.1109/iwgi.2003.159188