Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices.

MLA

Lin, H. C., et al. “Impacts of Hole Trapping on the NBTI Degradation and Recovery in PMOS Devices.” Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765), Jan. 2003, pp. 76–79. EBSCOhost, https://doi.org/10.1109/iwgi.2003.159188.

APA

Lin, H.-C., Lee, D.-Y., Ou, S.-C., Chien, C.-H., & Huang, T.-Y. (2003). Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices. Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765), 76–79. https://doi.org/10.1109/iwgi.2003.159188

Chicago

Lin, H.-C., D.-Y. Lee, S.-C. Ou, C.-H. Chien, and T.-Y. Huang. 2003. “Impacts of Hole Trapping on the NBTI Degradation and Recovery in PMOS Devices.” Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765), January, 76–79. doi:10.1109/iwgi.2003.159188.