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A high performance 0.18μm BiCMOS technology employing high carbon content in the base layer of the SiGe HBT to achieve low variability of hFE.
- Source :
- Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003; 2003, p119-122, 4p
- Publication Year :
- 2003
Details
- Language :
- English
- ISBNs :
- 9780780378001
- Database :
- Complementary Index
- Journal :
- Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003
- Publication Type :
- Conference
- Accession number :
- 81114428
- Full Text :
- https://doi.org/10.1109/BIPOL.2003.1274949