A high performance 0.18μm BiCMOS technology employing high carbon content in the base layer of the SiGe HBT to achieve low variability of hFE.

MLA

Sawada, S., et al. “A High Performance 0.18μm BiCMOS Technology Employing High Carbon Content in the Base Layer of the SiGe HBT to Achieve Low Variability of HFE.” Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003, Jan. 2003, pp. 119–22. EBSCOhost, https://doi.org/10.1109/BIPOL.2003.1274949.

APA

Sawada, S., Ohnishi, T., Saitoh, T., Yuki, K., Hasegawa, K., Shimizu, K., Clifton, P. A., Gallerano, A., & Pinto, A. (2003). A high performance 0.18μm BiCMOS technology employing high carbon content in the base layer of the SiGe HBT to achieve low variability of hFE. Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003, 119–122. https://doi.org/10.1109/BIPOL.2003.1274949

Chicago

Sawada, S., T. Ohnishi, T. Saitoh, K. Yuki, K. Hasegawa, K. Shimizu, P.A. Clifton, A. Gallerano, and A. Pinto. 2003. “A High Performance 0.18μm BiCMOS Technology Employing High Carbon Content in the Base Layer of the SiGe HBT to Achieve Low Variability of HFE.” Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003, January, 119–22. doi:10.1109/BIPOL.2003.1274949.