Back to Search Start Over

Transistor on capacitor (TOC) cell with quarter pitch layout for 0.13 μm DRAMs and beyond.

Authors :
Sato, M.
Ishibashi, S.
Kajiyama, T.
Sakuma, M.
Mizushima, I.
Tsunashima, Y.
Shoji, F.
Yano, H.
Nitayama, A.
Hamamoto, T.
Source :
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104); 2000, p82-83, 2p
Publication Year :
2000

Details

Language :
English
ISBNs :
9780780363052
Database :
Complementary Index
Journal :
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)
Publication Type :
Conference
Accession number :
80767919
Full Text :
https://doi.org/10.1109/VLSIT.2000.852778