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Temperature dependence of threshold current for 1.8 to 2.3 μm (AlGaIn)(AsSb)-based QW diode lasers.
- Source :
- 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p437-441, 5p
- Publication Year :
- 2000
Details
- Language :
- English
- ISBNs :
- 9780780362581
- Database :
- Complementary Index
- Journal :
- 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)
- Publication Type :
- Conference
- Accession number :
- 80765587
- Full Text :
- https://doi.org/10.1109/ISCS.2000.947195