Temperature dependence of threshold current for 1.8 to 2.3 μm (AlGaIn)(AsSb)-based QW diode lasers.

MLA

Rattunde, M., et al. “Temperature Dependence of Threshold Current for 1.8 to 2.3 Μm (AlGaIn)(AsSb)-Based QW Diode Lasers.” 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498), Jan. 2000, pp. 437–41. EBSCOhost, https://doi.org/10.1109/ISCS.2000.947195.

APA

Rattunde, M., Mermelstein, C., Simanowski, S., Schmitz, J., Kiefer, R., Herres, N., Fuchs, F., Walther, M., & Wagner, J. (2000). Temperature dependence of threshold current for 1.8 to 2.3 μm (AlGaIn)(AsSb)-based QW diode lasers. 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498), 437–441. https://doi.org/10.1109/ISCS.2000.947195

Chicago

Rattunde, M., C. Mermelstein, S. Simanowski, J. Schmitz, R. Kiefer, N. Herres, F. Fuchs, M. Walther, and J. Wagner. 2000. “Temperature Dependence of Threshold Current for 1.8 to 2.3 Μm (AlGaIn)(AsSb)-Based QW Diode Lasers.” 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498), January, 437–41. doi:10.1109/ISCS.2000.947195.