Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions.

Details

Language :

English

ISSN :

10711023

Volume :

16

Issue :

3

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74342943

Full Text :

https://doi.org/10.1116/1.589952