Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions.

MLA

Churchill, A. C., et al. “Two-Dimensional Electron Gas Mobility as a Function of Virtual Substrate Quality in Strained Si/SiGe Heterojunctions.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 16, no. 3, May 1998, pp. 1634–38. EBSCOhost, https://doi.org/10.1116/1.589952.

APA

Churchill, A. C., Robbins, D. J., Wallis, D. J., Griffin, N., Paul, D. J., Pidduck, A. J., Leong, W. Y., & Williams, G. M. (1998). Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 16(3), 1634–1638. https://doi.org/10.1116/1.589952

Chicago

Churchill, A. C., D. J. Robbins, D. J. Wallis, N. Griffin, D. J. Paul, A. J. Pidduck, W. Y. Leong, and G. M. Williams. 1998. “Two-Dimensional Electron Gas Mobility as a Function of Virtual Substrate Quality in Strained Si/SiGe Heterojunctions.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 16 (3): 1634–38. doi:10.1116/1.589952.