Comparison of NPN transistors fabricated with broad beam and spatial profiling using focused beam ion implantation.

Details

Language :

English

ISSN :

0734211X

Volume :

4

Issue :

1

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena

Publication Type :

Academic Journal

Accession number :

74324819

Full Text :

https://doi.org/10.1116/1.583335